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期刊名称：JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS ISSN： 1454-4164 出版频率： Quarterly 出版社： NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST,PO BOX MG-5, BUCHAREST-MAGURELE, ROMANIA, 76900 期刊网址： http://inoe.inoe.ro/Journal.html 影响因子： 0.577(2008) 主题范畴： OPTICS;    PHYSICS, APPLIED;    MATERIALS SCIENCE, MULTIDISCIPLINARY 期刊简介(About the journal)    投稿须知(Instructions to Authors)    编辑部信息(Editorial Board)    About the journal Theoretical papers are encouraged. Papers dealing with biomaterials and optoelectronic applications for medical purposes are accepted. An important aim of the Journal is to bring together the specialists from related fields: optoelectronics and materials. "Journal of Optoelectronics and Advanced Materials" has the following structure: Editorial Review paper Scientific and technological researches Short communications The journal has an international scientific board with researchers from: Belgium, Canada, Czech Republic, Denmark, France, Germany, Greece, Israel, Italy, Japan, Moldova, Poland, Ukraine, UK, USA and Romania.     Instructions to Authors The Journal of Optoelectronics and Advanced Materials appears quarterly and publishes review papers, research papers and short communications in the field of optoelectronics and new advanced materials: optoeloect ronic devices, crystals of relevance in optoelectronics, amorphous and glassy materials, functional and smart materials. Theoretical papers are encouraged. Papers dealing with biomaterials and optoelectronic applications for medical purposes are accepted. An important aim of the Journal is to bring together the specialists from related fields: optoelectronics and materials. Submission of papers Authors are invited to send the manuscripts in British English, firstly by e-mail and then by regular mail. Two hard copies and an electronic record on a 3 1/4 inches floppy disk are required. Review papers are limited to 20 pages. Regular papers are limited to 10 pages. Short communications are limited to 4 pages. Excepting short communications, every paper must have an abstract with maximum 200 words. At least three keywords, which characterize the subject of the work, must be specified. One full page of the Journal contains 54 rows with 95 characters/row (font size 11, Times New Roman). The following structure of a paper is recommended: 1. Introduction, 2. Experimental (Theory, Modeling, ...), 3. Results, 4. Discussion, 5. Conclusions. References will be consecutively numbered in the text and collected at the end of the paper in the following style for journals, proceedings and books, respectively [1] N. Rivier, Phil. Mag., 40 , 859 (1979). [2] S. R. Ovshinsky, Proc. 7-th Intern. Conf. Liq. Amorph. Semic., Edinburgh, Ed. W.E. Spear, Institute of Physics, Bristol, UK, 1978, p. 519. [3] N. F. Mott, E. A. Davis, Electron Processes in Non-Crystalline Materials, Clarendon Press, Oxford (1979). Figures and tables are recommended to be introduced in the text with their legends. The editor will send every manuscript to two referees for a critical examination. The comments of the referees and the decision of the Editorial Board regarding the publication will be sent to the corresponding authors. The manuscripts accepted for publication will be published in maximum three months. The corresponding author will receive one free copy of the issue of the Journal where the paper was printed and 15 reprints without charge. The authors can order additional reprints. All rights are reserved by "Journal of Optoelectronics and Advanced Materials" . Any reproduction or dissemination of the information herein, even as exce rpts of any extent, is permitted only by written consent of the Editor-in-Chief. Editorial Board Director of Publication Editorial Board Deputy Director of Publication Roxana Savastru National Institute of Optoelectronics, Bucharest, Romania Horia Alexandru - University of Bucharest, Romania Dan Apostol - National Institute of Lasers, Plasma and Radiation Physics, Bucharest, Romania Vasile Babin - National Institute of Optoelectronics, Bucharest, Romania Ion M. Popescu - "Politehnica" University, Bucharest, Romania Valentin Teodorescu - National Institute of Materials Physics, Bucharest, Romania Florin Vasiliu - National Institute of Materials Physics, Bucharest, Romania Roxana Radvan National Institute of Optoelectronics, Bucharest, Romania Editor-in-Chief: Technical Manager Mihai Popescu National Institute of Materials Physics, Bucharest, Romania, E-mail: mpopescu@alpha1.infim.ro Maria Nedelcu National Institute of Optoelectronics, Bucharest, Romania, E-mail: nedelcu@inoe.inoe.ro The manuscripts must be sent to the following address:  JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 1 ATOMISTILOR st., P. O. BOX MG - 5, 76900 BUCHAREST-MAGURELE, Romania Phone: (4021) 493.02.92, Phone/Fax: (4021) 457.45.22 E-mail: redactie@alpha2.infim.ro, review@inoe.inoe.ro, joam@alpha1.infim.ro